Optically induced
نویسنده
چکیده
The effect of optically generated reverse saturation current on the series resistance and negative resistance properties of single drift region (nnp) X band Si IMPATT diodes under (i) punch through, (ii) exact and (iii) undepleted field distributions have been studied. Simulation following Gummel-Blue approach [1] indicates an overall degradation of microwave properties with an increase of series resistance due to enhancement of illuminated leakage current.
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تاریخ انتشار 2014